Thin-Film Process Technology for Ferroelectric Application
نویسنده
چکیده
Recently thin-film ferroelectrics such as Pb(Zr, Ti)O3 (PZT) and (Ba, Sr)TiO3 (BST) have been utilized to form advanced semiconductor and electronic devices including Ferroelectric Ran‐ dom Access memory(FeRAM), actuators composing gyro meters, portable camera modules, and tunable devices for smart phone applications and so on. Processing technology of ferro‐ electric materials is one of the most important technologies to enable the abovementioned advanced devices and their productions.
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